PART |
Description |
Maker |
UPD784217AY UPD78F4216AYGC-8EU UPD78F4216AYGF-3BA |
MOS INTEGRATED CIRCUIT 马鞍山集成电 (UPD78F4216A / UPD78F4218A) MOS INTEGRATED CIRCUIT ER 1C 1#12 PIN PLUG
|
NEC, Corp. NEC Corp.
|
UPD5555 UPD5555C UPD5555G2 D5555C |
CMOS Timer MOS INTEGRATED CIRCUIT
|
NEC Electronics NEC[NEC]
|
TC55V16256FTI TC55V16256FTI-12 TC55V16256FTI-15 TC |
262, 144-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC55NEM216ASTV55 TC55NEM216ASTV70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
TH58100FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC55NEM216ASTV55 |
(TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
TH58NVG1S3AFT TH58NVG1S3AFT05 |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation Toshiba, Corp.
|
TC58DVG02A1FT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
TC55V4326FF-133 TC55V4326FF-150 TC55V4326FF-167 |
131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山数字集成电路硅栅CMOS
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|